IXYS

IXTK17N120L

Datasheet

1200V 17A N-Channel MOSFET, 900mR Rds(on), TO-264

Ixys

IXTK17N120L

Name: IXTK17N120L Ixys
Brand: Ixys
SKU: IXTK17N120L

1200V 17A N-Channel MOSFET, 900mR Rds(on), TO-264

N-Channel Power MOSFET, 1200V Drain-Source Breakdown Voltage, 17A Continuous Drain Current, and 900mΩ Max Drain-Source On-Resistance. Features 700W Max Power Dissipation, 8.3nF Input Capacitance, and 63ns Fall Time. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-264 case with through-hole mounting.

PackageTO-264

MountingThrough Hole

PolarityN-CHANNEL

Power700W

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Technical Specifications

Ixys IXTK17N120L technical specifications.

General

Package/Case	TO-264
Continuous Drain Current (ID)	17A
Drain to Source Breakdown Voltage	1.2kV
Drain to Source Resistance	990mR
Drain to Source Voltage (Vdss)	1.2kV
Drain-source On Resistance-Max	900MR
Fall Time	63ns
Gate to Source Voltage (Vgs)	30V
Height	26.16mm
Input Capacitance	8.3nF
Lead Free	Lead Free
Length	19.96mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	700W
Mount	Through Hole
Package Quantity	25
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	700W
Rds On Max	900mR
RoHS Compliant	Yes
Turn-Off Delay Time	75ns
Turn-On Delay Time	40ns
Width	5.13mm