N-channel power MOSFET featuring 180A continuous drain current and 100V drain-source breakdown voltage. This silicon Metal-oxide Semiconductor FET offers a low 10mΩ drain-source on-resistance and a maximum power dissipation of 800W. Designed for through-hole mounting in a TO-264 package, it operates from -55°C to 175°C and includes a 5V threshold voltage with a 36ns fall time.
PackageTO-264
MountingThrough Hole
PolarityN-CHANNEL
Power800W
Quick Jump:
Technical Specifications
Ixys IXTK180N15P technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 10MR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 800W |
| Rds On Max | 10mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHT™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 150ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTK180N15P Datasheet
Download the complete datasheet for Ixys IXTK180N15P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
