N-Channel Power MOSFET, 100V Vds, 200A Continuous Drain Current (ID), and 11mΩ Rds On Max. This silicon Metal-Oxide Semiconductor FET features a TO-264AA package with through-hole mounting and 3 pins. It offers a maximum power dissipation of 1.04kW and operates within a temperature range of -55°C to 150°C. Input capacitance is 23nF, and the component is lead-free and RoHS compliant.
PackageTO-264-3
MountingThrough Hole
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Technical Specifications
Ixys IXTK200N10L2 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 200A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 23nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | Linear L2™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTK200N10L2 Datasheet
Download the complete datasheet for Ixys IXTK200N10L2 to view detailed technical specifications.
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