IXTK20N150

Power Field-Effect Transistor, 20A I(D), 1500V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

PackageTO-264-3

MountingThrough Hole

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Ixys IXTK20N150 technical specifications.

Package/Case

TO-264-3

Continuous Drain Current (ID)

20A

Drain to Source Voltage (Vdss)

1.5kV

Input Capacitance

7.8nF

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Max Power Dissipation

1.25kW

Mount

Through Hole

Packaging

Rail/Tube

Rds On Max

RoHS Compliant

Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.