N-Channel Power MOSFET featuring 1000V drain-source breakdown voltage and 22A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 600mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-264 package, it supports a maximum power dissipation of 700W and operates within a temperature range of -55°C to 150°C. The component is lead-free and RoHS compliant.
PackageTO-264
MountingThrough Hole
PolarityN-CHANNEL
Power700W
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Technical Specifications
Ixys IXTK22N100L technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 600R |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 7.05nF |
| Lead Free | Lead Free |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 36ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTK22N100L Datasheet
Download the complete datasheet for Ixys IXTK22N100L to view detailed technical specifications.
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