N-Channel Power MOSFET, 500V Vdss, 60A Continuous Drain Current, 100mΩ Rds On. Features include 960W Max Power Dissipation, 2.5V Nominal Vgs, and 24nF Input Capacitance. Packaged in a TO-264 through-hole mount, this silicon Metal-oxide Semiconductor FET operates from -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-264
MountingThrough Hole
Power960W
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Technical Specifications
Ixys IXTK60N50L2 technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 500V |
| Input Capacitance | 24nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Through Hole |
| Nominal Vgs | 2.5V |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 960W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Linear L2™ |
| Threshold Voltage | 2.5V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTK60N50L2 Datasheet
Download the complete datasheet for Ixys IXTK60N50L2 to view detailed technical specifications.
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