N-Channel Power MOSFET featuring 250V drain-source breakdown voltage and 90A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 33mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-264 package, it supports a maximum power dissipation of 960W and operates within a temperature range of -55°C to 150°C. The component is RoHS compliant.
PackageTO-264
MountingThrough Hole
PolarityN-CHANNEL
Power960W
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Technical Specifications
Ixys IXTK90N25L2 technical specifications.
General
Package/Case
TO-264
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
33mR
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
33MR
Gate to Source Voltage (Vgs)
20V
Input Capacitance
23nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
960W
Mount
Through Hole
Nominal Vgs
2V
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
960W
Rds On Max
33mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Linear L2™
Threshold Voltage
2V
Compliance
RoHS
Compliant
Datasheet
Ixys IXTK90N25L2 Datasheet
Download the complete datasheet for Ixys IXTK90N25L2 to view detailed technical specifications.
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