N-Channel Power MOSFET featuring 250V drain-source breakdown voltage and 90A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 33mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-264 package, it supports a maximum power dissipation of 960W and operates within a temperature range of -55°C to 150°C. The component is RoHS compliant.
PackageTO-264
MountingThrough Hole
PolarityN-CHANNEL
Power960W
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Technical Specifications
Ixys IXTK90N25L2 technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 33mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 33MR |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 23nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 960W |
| Rds On Max | 33mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Linear L2™ |
| Threshold Voltage | 2V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTK90N25L2 Datasheet
Download the complete datasheet for Ixys IXTK90N25L2 to view detailed technical specifications.
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