P-channel MOSFET featuring 200V drain-to-source breakdown voltage and 90A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 44mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-264 package, it supports a maximum power dissipation of 890W and operates within a temperature range of -55°C to 150°C. The component is lead-free and RoHS compliant.
PackageTO-264
MountingThrough Hole
PolarityP-CHANNEL
Power890W
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Technical Specifications
Ixys IXTK90P20P technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 44mR |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 12nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 890W |
| Radiation Hardening | No |
| Rds On Max | 44mR |
| RoHS Compliant | Yes |
| Series | PolarP™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTK90P20P Datasheet
Download the complete datasheet for Ixys IXTK90P20P to view detailed technical specifications.
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