N-CHANNEL Power Field-Effect Transistor featuring a 4.5kV Drain to Source Breakdown Voltage and 2A Continuous Drain Current. This through-hole mounted MOSFET offers a 23 Ohm Drain to Source Resistance (Rds On Max) and a 220W maximum power dissipation. Key switching characteristics include a 205ns fall time and 100ns turn-off delay time, with an input capacitance of 6.9nF. Operating temperature range spans from -55°C to 150°C, with a maximum Gate to Source Voltage of 20V.
MountingThrough Hole
PolarityN-CHANNEL
Power220W
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Technical Specifications
Ixys IXTL2N450 technical specifications.
General
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 4.5kV |
| Drain to Source Resistance | 23R |
| Drain to Source Voltage (Vdss) | 4.5kV |
| Fall Time | 205ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 220W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 220W |
| Rds On Max | 23R |
| Turn-Off Delay Time | 100ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTL2N450 Datasheet
Download the complete datasheet for Ixys IXTL2N450 to view detailed technical specifications.
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