N-Channel Power MOSFET, 500V Drain-Source Breakdown Voltage, 21A Continuous Drain Current. Features 0.25 ohm Drain-Source On-Resistance, 300W Max Power Dissipation, and 150°C Max Operating Temperature. Designed for through-hole mounting in a TO-204AE package. Includes 30ns fall time and 65ns turn-off delay time.
PackageTO-204AE
Current Rating21A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTM21N50 technical specifications.
General
| Package/Case | TO-204AE |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 14nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 230mR |
| RoHS Compliant | Yes |
| Series | Polar™ HiPerFET™ |
| Turn-Off Delay Time | 65ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTM21N50 Datasheet
Download the complete datasheet for Ixys IXTM21N50 to view detailed technical specifications.
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