N-Channel Power MOSFET, 500V Drain to Source Voltage (Vdss), 24A Continuous Drain Current (ID), and 0.23ohm Drain to Source Resistance. Features a 4V nominal Gate to Source Voltage (Vgs) and a 4V threshold voltage. This silicon Metal-oxide Semiconductor FET is housed in a TO-204AE package for through-hole mounting. Offers 300W maximum power dissipation and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-204AE
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXTM24N50 technical specifications.
General
| Package/Case | TO-204AE |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 500V |
| Dual Supply Voltage | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTM24N50 Datasheet
Download the complete datasheet for Ixys IXTM24N50 to view detailed technical specifications.
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