P-channel silicon MOSFET, 100V drain-source voltage, 170A continuous drain current, and 12mΩ Rds On. Features a maximum power dissipation of 890W and a low input capacitance of 12.6nF. Designed for chassis mounting with screw terminals, this single-element Metal-oxide Semiconductor FET operates from -55°C to 150°C. Packaged in SOT-227-4, it is lead-free and RoHS compliant.
PackageSOT-227-4
MountingChassis Mount, Screw
Power890W
Quick Jump:
Technical Specifications
Ixys IXTN170P10P technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 170A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 12.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Power Dissipation | 890W |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | PolarP™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTN170P10P Datasheet
Download the complete datasheet for Ixys IXTN170P10P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
