N-Channel Power MOSFET, 100V Vds, 178A Continuous Drain Current (ID), and 11mΩ Drain-Source On-Resistance (Rds On). This silicon Metal-Oxide-Semiconductor FET features a maximum power dissipation of 830W and operates within a temperature range of -55°C to 150°C. Packaged in a SOT-227-4 (MINIBLOC-4) for chassis mounting, it offers lead-free and RoHS compliance.
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power830W
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Technical Specifications
Ixys IXTN200N10L2 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 178A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 11MR |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 23nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Chassis Mount |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | Linear L2™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTN200N10L2 Datasheet
Download the complete datasheet for Ixys IXTN200N10L2 to view detailed technical specifications.
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