N-Channel Power MOSFET, 1000V Drain-Source Voltage (Vdss), 21A Continuous Drain Current (ID), and 550mΩ maximum Drain-Source On-Resistance (Rds On). Features a 4.5V nominal Gate-Source Voltage (Vgs) and 520W maximum Power Dissipation. This silicon Metal-oxide Semiconductor FET is housed in a SOT-227B MINIBLOC-4 package, suitable for chassis mounting. Includes 40ns fall time and 100ns turn-off delay time.
PackageSOT-227-4
Current Rating21A
MountingChassis Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTN21N100 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 550mR |
| Dual Supply Voltage | 1kV |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 8.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 520W |
| Mount | Chassis Mount |
| Nominal Vgs | 4.5V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 520W |
| Rds On Max | 550mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Series | MegaMOS™ |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 1kV |
Compliance
| RoHS | Not Compliant |
Datasheet
Ixys IXTN21N100 Datasheet
Download the complete datasheet for Ixys IXTN21N100 to view detailed technical specifications.
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