N-Channel Power MOSFET featuring 1000V drain-source breakdown voltage and 22A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a maximum on-resistance of 600mΩ. Designed for chassis or panel mounting, it operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 700W. Key switching parameters include a 36ns turn-on delay and 50ns fall time.
PackageSOT-227-4
MountingChassis Mount, Panel
PolarityN-CHANNEL
Power700W
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Technical Specifications
Ixys IXTN22N100L technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 600mR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 7.05nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Chassis Mount, Panel |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 36ns |
| Width | 25.07mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTN22N100L Datasheet
Download the complete datasheet for Ixys IXTN22N100L to view detailed technical specifications.
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