N-Channel Power MOSFET featuring 600A continuous drain current and 40V drain-to-source voltage. This silicon, metal-oxide semiconductor FET offers a low 1.05mΩ Rds On and a maximum power dissipation of 940W. Designed for chassis mounting with screw terminals, it operates from -55°C to 175°C and includes fast switching characteristics with a 40ns turn-on delay and 250ns fall time. The component is housed in a PLASTIC, MINI BLOC, 4 PIN package and is RoHS compliant.
PackageSOT-227-4
Current200A
MountingChassis Mount, Screw
Power940W
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Technical Specifications
Ixys IXTN600N04T2 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 600A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 250ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 40nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 940W |
| Mount | Chassis Mount, Screw |
| Number of Drivers | 1 |
| Number of Elements | 1 |
| Number of Outputs | 1 |
| Output Current | 600A |
| Output Voltage | 40V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Power Dissipation | 940W |
| Radiation Hardening | No |
| Rds On Max | 1.05mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™, TrenchT2™ |
| Supply Current | 200A |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTN600N04T2 Datasheet
Download the complete datasheet for Ixys IXTN600N04T2 to view detailed technical specifications.
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