N-channel Power MOSFET designed for high-efficiency switching applications. Features a low on-resistance (Rds(on)) for reduced conduction losses and a high continuous drain current capability. Optimized for fast switching speeds, enabling efficient power conversion. Suitable for demanding power management circuits.
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Technical Specifications
Ixys IXTN660N04T4 technical specifications.
Compliance
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Ixys IXTN660N04T4 Datasheet
Download the complete datasheet for Ixys IXTN660N04T4 to view detailed technical specifications.
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