N-Channel Power MOSFET featuring 250V drain-source breakdown voltage and 90A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 33mΩ drain-source on-resistance. Designed for chassis mounting in a SOT-227-4 package, it supports a maximum power dissipation of 735W and operates from -55°C to 150°C. The component is lead-free and RoHS compliant.
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power735W
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Technical Specifications
Ixys IXTN90N25L2 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 33mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 33MR |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 23nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 735W |
| Mount | Chassis Mount |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 735W |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Series | Linear L2™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTN90N25L2 Datasheet
Download the complete datasheet for Ixys IXTN90N25L2 to view detailed technical specifications.
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