Ixys
IXTP01N100D
Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AD, TO-220AD, 3 PIN
PackageTO-220
Current Rating4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTP01N100D technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
100mA
Current Rating
4A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
90R
Drain to Source Voltage (Vdss)
1kV
Gate to Source Voltage (Vgs)
20V
Input Capacitance
120pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
110R
RoHS Compliant
Yes
Turn-Off Delay Time
30ns
DC Rated Voltage
1kV
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP01N100D Datasheet
Download the complete datasheet for Ixys IXTP01N100D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.