Ixys
IXTP02N50D
Power Field-Effect Transistor, 0.2A I(D), 500V, 30ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AD, TO-220AD, 3 PIN
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Ixys IXTP02N50D technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
200mA
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
30R
Drain to Source Voltage (Vdss)
500V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
120pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Rds On Max
30R
RoHS Compliant
Yes
Turn-Off Delay Time
28ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP02N50D Datasheet
Download the complete datasheet for Ixys IXTP02N50D to view detailed technical specifications.
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