Ixys
IXTP05N100P
Power Field-Effect Transistor, 0.5A I(D), 1000V, 30ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Ixys IXTP05N100P technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
500mA
Drain to Source Voltage (Vdss)
1kV
Input Capacitance
196pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Packaging
Rail/Tube
Rds On Max
30R
RoHS Compliant
Yes
Series
Polar™
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP05N100P Datasheet
Download the complete datasheet for Ixys IXTP05N100P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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