
The IXTP100N04T2 is a N-CHANNEL TrenchT2 MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current rating of 100A and a drain to source breakdown voltage of 40V. The device features a drain to source resistance of 7mR and a maximum power dissipation of 150W. It is packaged in a TO-220 package with a 3 PIN configuration and is RoHS compliant.
Ixys IXTP100N04T2 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 6.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.69nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 7mR |
| RoHS Compliant | Yes |
| Series | TrenchT2™ |
| Turn-Off Delay Time | 15.8ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTP100N04T2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
