P-channel power MOSFET, 500V Drain to Source Breakdown Voltage, 10A Continuous Drain Current, and 1 ohm Drain-Source On Resistance. Features include 300W Max Power Dissipation, 44ns Fall Time, and 52ns Turn-Off Delay Time. This silicon Metal-oxide Semiconductor FET is housed in a TO-220AB plastic package for through-hole mounting. Operating temperature range is -55°C to 150°C.
PackageTO-220
MountingThrough Hole
PolarityP-CHANNEL
Power300W
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Technical Specifications
Ixys IXTP10P50P technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 1R |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.84nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Series | PolarP™ |
| Turn-Off Delay Time | 52ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP10P50P Datasheet
Download the complete datasheet for Ixys IXTP10P50P to view detailed technical specifications.
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