IXYS

IXTP110N055P

Datasheet

55V 110A N-CH MOSFET TO-220, 13.5mR RdsOn

Ixys

IXTP110N055P

Name: IXTP110N055P Ixys
Brand: Ixys
SKU: IXTP110N055P

55V 110A N-CH MOSFET TO-220, 13.5mR RdsOn

N-channel MOSFET in a TO-220 package, featuring a 55V drain-source breakdown voltage and a continuous drain current of 110A. Offers a low on-resistance of 13.5mR and a maximum power dissipation of 390W. Designed for through-hole mounting, this component operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a turn-on delay time of 27ns and a fall time of 45ns.

PackageTO-220

MountingThrough Hole

PolarityN-CHANNEL

Power390W

Quick Jump:

Technical Specifications

Ixys IXTP110N055P technical specifications.

General

Package/Case	TO-220
Continuous Drain Current (ID)	110A
Drain to Source Breakdown Voltage	55V
Drain to Source Resistance	13.5mR
Drain to Source Voltage (Vdss)	55V
Fall Time	45ns
Gate to Source Voltage (Vgs)	20V
Height	9.15mm
Input Capacitance	2.21nF
Length	10.66mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	390W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	390W
Rds On Max	13.5mR
RoHS Compliant	Yes
Series	PolarHT™
Turn-Off Delay Time	66ns
Turn-On Delay Time	27ns
Width	4.83mm