Ixys
IXTP12N50PM
Power Field-Effect Transistor, 6A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, ISOLATED TO-220, 3 PIN
PackageTO-220AB
Current Rating12A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTP12N50PM technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
6A
Current Rating
12A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
500V
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.83nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
50W
Rds On Max
500mR
RoHS Compliant
Yes
Series
Polar™
Turn-Off Delay Time
65ns
DC Rated Voltage
500V
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP12N50PM Datasheet
Download the complete datasheet for Ixys IXTP12N50PM to view detailed technical specifications.
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