IXTP130N10T

Power Field-Effect Transistor, 130A I(D), 100V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

PackageTO-220-3

MountingThrough Hole

PolarityN-CHANNEL

Power360W

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Ixys IXTP130N10T technical specifications.

Package/Case	TO-220-3
Continuous Drain Current (ID)	130A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	8.5mR
Drain to Source Voltage (Vdss)	100V
Fall Time	28ns
Input Capacitance	5.08nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	360W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	360W
Rds On Max	9.1mR
RoHS Compliant	Yes
Series	TrenchMV™
Turn-Off Delay Time	44ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.