P-channel MOSFET featuring a 50V drain-source voltage and 140A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 9mΩ Rds On resistance and a maximum power dissipation of 298W. Designed for through-hole mounting in a TO-220AB plastic package, it operates within a temperature range of -55°C to 150°C and boasts a 13.5nF input capacitance. The component is lead-free and RoHS compliant.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Ixys IXTP140P05T technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 140A |
| Drain to Source Voltage (Vdss) | 50V |
| Input Capacitance | 13.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 298W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | TrenchP™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP140P05T Datasheet
Download the complete datasheet for Ixys IXTP140P05T to view detailed technical specifications.
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