Ixys
IXTP152N085T
Power Field-Effect Transistor, 152A I(D), 85V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXTP152N085T technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
152A
Drain to Source Breakdown Voltage
85V
Drain to Source Resistance
7mR
Drain to Source Voltage (Vdss)
85V
Fall Time
45ns
Input Capacitance
5.5nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
360W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
360W
Rds On Max
7mR
RoHS Compliant
Yes
Series
TrenchMV™
Turn-Off Delay Time
50ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP152N085T Datasheet
Download the complete datasheet for Ixys IXTP152N085T to view detailed technical specifications.
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