IXTP16N50P

500V 16A N-Channel MOSFET, 400mR Rds On, TO-220

N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 16A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.4-ohm drain-source resistance (Rds On Max) and 300W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 25ns fall time and 70ns turn-off delay time.

PackageTO-220

Current Rating16A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Ixys IXTP16N50P technical specifications.

General

Package/Case	TO-220
Continuous Drain Current (ID)	16A
Current Rating	16A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	400mR
Drain to Source Voltage (Vdss)	500V
Fall Time	25ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	2.25nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	300W
Rds On Max	400mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	PolarHV™
Threshold Voltage	5.5V
Turn-Off Delay Time	70ns
DC Rated Voltage	500V