Ixys
IXTP18N60PM
Power Field-Effect Transistor, 9A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Ixys IXTP18N60PM technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
9A
Drain to Source Voltage (Vdss)
600V
Input Capacitance
2.5nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Rds On Max
420mR
RoHS Compliant
Yes
Series
Polar™
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP18N60PM Datasheet
Download the complete datasheet for Ixys IXTP18N60PM to view detailed technical specifications.
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