N-Channel Power MOSFET, 600V Drain-to-Source Breakdown Voltage, 1.4A Continuous Drain Current, 9 Ohm Drain-to-Source Resistance. Features 50W Max Power Dissipation, 140pF Input Capacitance, 16ns Fall Time, and 25ns Turn-Off Delay. Designed for through-hole mounting in a TO-220 package, operating from -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-220
Current Rating1.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTP1R4N60P technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
1.4A
Current Rating
1.4A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
9R
Drain to Source Voltage (Vdss)
600V
Fall Time
16ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
140pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Number of Elements
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
50W
Rds On Max
9R
RoHS Compliant
Yes
Series
PolarHV™
Turn-Off Delay Time
25ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP1R4N60P Datasheet
Download the complete datasheet for Ixys IXTP1R4N60P to view detailed technical specifications.
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