N-Channel Power MOSFET, 600V Drain-to-Source Breakdown Voltage, 1.4A Continuous Drain Current, 9 Ohm Drain-to-Source Resistance. Features 50W Max Power Dissipation, 140pF Input Capacitance, 16ns Fall Time, and 25ns Turn-Off Delay. Designed for through-hole mounting in a TO-220 package, operating from -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-220
Current Rating1.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTP1R4N60P technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 1.4A |
| Current Rating | 1.4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 9R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 140pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 9R |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 25ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP1R4N60P Datasheet
Download the complete datasheet for Ixys IXTP1R4N60P to view detailed technical specifications.
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