The IXTP1R6N50D2 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 1.6A. The device is packaged in a TO-220-3 plastic package and is lead-free and RoHS compliant. It has a maximum power dissipation of 100W and a gate to source voltage of 20V.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power100W
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Technical Specifications
Ixys IXTP1R6N50D2 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.3R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 41ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 645pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 2.3R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP1R6N50D2 Datasheet
Download the complete datasheet for Ixys IXTP1R6N50D2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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