N-channel Power MOSFET, 500V Drain-Source Voltage (Vdss), 1.6A Continuous Drain Current (ID). Features 6.5 Ohm Rds On Max, 5.5V Threshold Voltage, and 140pF Input Capacitance. Operates with a 30V Gate-Source Voltage (Vgs) and offers a 43W Max Power Dissipation. Packaged in a TO-220 through-hole mount, this RoHS compliant component is designed for demanding applications.
PackageTO-220
Current Rating1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTP1R6N50P technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 1.6A |
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 6.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 140pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 43W |
| Rds On Max | 6.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Threshold Voltage | 5.5V |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP1R6N50P Datasheet
Download the complete datasheet for Ixys IXTP1R6N50P to view detailed technical specifications.
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