IXTP200N075T

Name: IXTP200N075T Ixys
Brand: Ixys
SKU: IXTP200N075T

Power Field-Effect Transistor, 200A I(D), 75V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

PackageTO-220AB

MountingThrough Hole

PolarityN-CHANNEL

Power430W

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Ixys IXTP200N075T technical specifications.

Package/Case	TO-220AB
Continuous Drain Current (ID)	200A
Drain to Source Breakdown Voltage	75V
Drain to Source Resistance	5mR
Drain to Source Voltage (Vdss)	75V
Fall Time	52ns
Input Capacitance	6.8nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	430W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	430W
Rds On Max	5mR
RoHS Compliant	Yes
Series	TrenchMV™
Turn-Off Delay Time	54ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.