The IXTP200N075T is a high-power N-channel MOSFET from Ixys, featuring a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current of 200A and a drain to source breakdown voltage of 75V. The device also boasts a low drain to source resistance of 5mR and a maximum power dissipation of 430W. The IXTP200N075T is packaged in a TO-220AB flange mount package and is RoHS compliant.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power430W
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Technical Specifications
Ixys IXTP200N075T technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 200A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 52ns |
| Input Capacitance | 6.8nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 430W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 430W |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Series | TrenchMV™ |
| Turn-Off Delay Time | 54ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP200N075T Datasheet
Download the complete datasheet for Ixys IXTP200N075T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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