Ixys
IXTP220N04T2
Power Field-Effect Transistor, 220A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
PackageTO-220AB
Voltage40V
Current75A
MountingThrough Hole
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Technical Specifications
Ixys IXTP220N04T2 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
220A
Current
75A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
3.5mR
Drain to Source Voltage (Vdss)
40V
Fall Time
21ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
6.82nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
360W
Mount
Through Hole
Package Quantity
50
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
360W
Rds On Max
3.5mR
RoHS Compliant
Yes
Series
TrenchT2™
Turn-Off Delay Time
31ns
Voltage
40V
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP220N04T2 Datasheet
Download the complete datasheet for Ixys IXTP220N04T2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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