P-channel MOSFET featuring 200V drain-source breakdown voltage and 26A continuous drain current. Offers low 170mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, with a maximum power dissipation of 300W. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-220
MountingThrough Hole
PolarityP-CHANNEL
Power300W
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Technical Specifications
Ixys IXTP26P20P technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 170MR |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.74nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 170mR |
| RoHS Compliant | Yes |
| Series | PolarP™ |
| Turn-Off Delay Time | 46ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP26P20P Datasheet
Download the complete datasheet for Ixys IXTP26P20P to view detailed technical specifications.
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