IXTP2R4N50P

Power Field-Effect Transistor, 2.4A I(D), 500V, 3.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

PackageTO-220AB

Current Rating2A

MountingThrough Hole

PolarityN-CHANNEL

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Ixys IXTP2R4N50P technical specifications.

Package/Case	TO-220AB
Continuous Drain Current (ID)	2.4A
Current Rating	2A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	3.75R
Drain to Source Voltage (Vdss)	500V
Fall Time	28ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	240pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	55W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	55W
Rds On Max	3.75R
RoHS Compliant	Yes
Series	PolarHV™
Turn-Off Delay Time	65ns
DC Rated Voltage	500V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.