N-channel power MOSFET featuring 300V drain-source breakdown voltage and 36A continuous drain current. Offers a low 110mΩ drain-source on-resistance and 300W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, this silicon metal-oxide semiconductor FET includes a 1-element configuration with fast switching characteristics, including a 24ns turn-on delay and 28ns fall time. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power300W
Quick Jump:
Technical Specifications
Ixys IXTP36N30P technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 36A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 110MR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.15mm |
| Input Capacitance | 2.25nF |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | PolarHT™ |
| Turn-Off Delay Time | 97ns |
| Turn-On Delay Time | 24ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP36N30P Datasheet
Download the complete datasheet for Ixys IXTP36N30P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
