IXTP3N100D2

Power Field-Effect Transistor, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3

PackageTO-220AB

MountingThrough Hole

Quick Jump:

Ixys IXTP3N100D2 technical specifications.

Package/Case

TO-220AB

Continuous Drain Current (ID)

Drain to Source Voltage (Vdss)

1kV

Input Capacitance

1.02nF

Lead Free

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Max Power Dissipation

125W

Mount

Through Hole

Packaging

Rail/Tube

Rds On Max

5.5R

RoHS Compliant

Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.