The IXTP3N100P is a high-voltage N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 1kV and a continuous drain current of 3A. The device is packaged in a TO-220AB package and is designed for through-hole mounting. It is RoHS compliant and has a maximum power dissipation of 125W.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Ixys IXTP3N100P technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 4.8R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 4.8R |
| RoHS Compliant | Yes |
| Series | PolarVHV™ |
| Turn-Off Delay Time | 75ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP3N100P Datasheet
Download the complete datasheet for Ixys IXTP3N100P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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