Ixys
IXTP3N50D2
Power Field-Effect Transistor, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Ixys IXTP3N50D2 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
3A
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
1.5R
Input Capacitance
1.07nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Packaging
Rail/Tube
Rds On Max
1.5R
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP3N50D2 Datasheet
Download the complete datasheet for Ixys IXTP3N50D2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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