N-Channel Power MOSFET, TO-220 package, featuring 250V drain-source breakdown voltage and 42A continuous drain current. Offers a low 84mΩ drain-source on-resistance. Designed for through-hole mounting with a maximum power dissipation of 300W. Includes a 5.5V threshold voltage and 2.3nF input capacitance.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXTP42N25P technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 84mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 84MR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 84mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHT™ |
| Threshold Voltage | 5.5V |
| Turn-Off Delay Time | 81ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP42N25P Datasheet
Download the complete datasheet for Ixys IXTP42N25P to view detailed technical specifications.
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