The IXTP4N60P is a N-Channel MOSFET with a drain to source breakdown voltage of 600V and a continuous drain current of 4A. It is packaged in a TO-220AB flange mount package and is RoHS compliant. The device has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is suitable for high power dissipation applications with a maximum power dissipation of 89W.
PackageTO-220AB
Current Rating4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTP4N60P technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 635pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 50ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP4N60P Datasheet
Download the complete datasheet for Ixys IXTP4N60P to view detailed technical specifications.
No datasheet is available for this part.