N-Channel Power MOSFET, TO-220 package, featuring 200V Drain to Source Breakdown Voltage (Vdss) and 50A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 60mΩ Drain to Source Resistance (Rds On Max) and a maximum power dissipation of 360W. Designed for through-hole mounting, it operates within a temperature range of -55°C to 175°C and includes fast switching characteristics with turn-on delay of 26ns and fall time of 30ns. RoHS compliant and lead-free.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXTP50N20P technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.15mm |
| Input Capacitance | 2.72nF |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | PolarHT™ |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 26ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP50N20P Datasheet
Download the complete datasheet for Ixys IXTP50N20P to view detailed technical specifications.
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