Ixys
IXTP50N20PM
Power Field-Effect Transistor, 20A I(D), 200V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, OVERMOLDED TO-220, 3 PIN
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Ixys IXTP50N20PM technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
66mR
Drain to Source Voltage (Vdss)
200V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.72nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Rds On Max
60mR
RoHS Compliant
Yes
Series
PolarHT™
Turn-Off Delay Time
70ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP50N20PM Datasheet
Download the complete datasheet for Ixys IXTP50N20PM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.