Ixys
IXTP56N15T
Power Field-Effect Transistor, 56A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Ixys IXTP56N15T technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
56A
Drain to Source Voltage (Vdss)
150V
Input Capacitance
2.25nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
50
Packaging
Bulk
Rds On Max
36mR
RoHS Compliant
Yes
Series
TrenchHV™
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP56N15T Datasheet
Download the complete datasheet for Ixys IXTP56N15T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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