Ixys
IXTP5N60P
Power Field-Effect Transistor, 5A I(D), 600V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
PackageTO-220AB
Current Rating5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTP5N60P technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
5A
Current Rating
5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.7R
Drain to Source Voltage (Vdss)
600V
Fall Time
17ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
750pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
100W
Rds On Max
1.7R
RoHS Compliant
Yes
Series
PolarHV™
Turn-Off Delay Time
55ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP5N60P Datasheet
Download the complete datasheet for Ixys IXTP5N60P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.