N-Channel Power MOSFET, 150V Vdss, 62A Continuous Drain Current (ID), and 40mΩ Rds On. Features a TO-220 package for through-hole mounting, 350W maximum power dissipation, and a maximum operating temperature of 175°C. Includes fast switching characteristics with turn-on delay of 27ns and fall time of 35ns. Silicon construction with Metal-oxide Semiconductor FET technology.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power350W
Quick Jump:
Technical Specifications
Ixys IXTP62N15P technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 62A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.15mm |
| Input Capacitance | 2.25nF |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 350W |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | PolarHT™ |
| Turn-Off Delay Time | 76ns |
| Turn-On Delay Time | 27ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP62N15P Datasheet
Download the complete datasheet for Ixys IXTP62N15P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
