N-Channel Power MOSFET, 150V Vdss, 62A Continuous Drain Current (ID), and 40mΩ Rds On. Features a TO-220 package for through-hole mounting, 350W maximum power dissipation, and a maximum operating temperature of 175°C. Includes fast switching characteristics with turn-on delay of 27ns and fall time of 35ns. Silicon construction with Metal-oxide Semiconductor FET technology.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power350W
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Technical Specifications
Ixys IXTP62N15P technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
62A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
150V
Fall Time
35ns
Gate to Source Voltage (Vgs)
20V
Height
9.15mm
Input Capacitance
2.25nF
Length
10.66mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
350W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
350W
Rds On Max
40mR
RoHS Compliant
Yes
Series
PolarHT™
Turn-Off Delay Time
76ns
Turn-On Delay Time
27ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP62N15P Datasheet
Download the complete datasheet for Ixys IXTP62N15P to view detailed technical specifications.
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