IXTP6N50P

Name: IXTP6N50P Ixys
Brand: Ixys
SKU: IXTP6N50P

Power Field-Effect Transistor, 6A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

PackageTO-220AB

Current Rating6A

MountingThrough Hole

PolarityN-CHANNEL

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Ixys IXTP6N50P technical specifications.

Package/Case	TO-220AB
Continuous Drain Current (ID)	6A
Current Rating	6A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	1.1R
Drain to Source Voltage (Vdss)	500V
Fall Time	26ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	740pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	100W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	100W
Rds On Max	1.1R
RoHS Compliant	Yes
Series	PolarHV™
Turn-Off Delay Time	65ns
DC Rated Voltage	500V