The IXTP70N085T is an N-channel MOSFET with a drain to source breakdown voltage of 85V and a continuous drain current of 70A. It has a drain to source resistance of 13.5mR and a maximum power dissipation of 176W. The device is packaged in a TO-220AB flange mount package and is RoHS compliant. It operates over a temperature range of -55°C to 175°C.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power176W
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Technical Specifications
Ixys IXTP70N085T technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Breakdown Voltage | 85V |
| Drain to Source Resistance | 13.5mR |
| Drain to Source Voltage (Vdss) | 85V |
| Fall Time | 40ns |
| Input Capacitance | 2.57nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 176W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 176W |
| Rds On Max | 13.5mR |
| RoHS Compliant | Yes |
| Series | TrenchMV™ |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP70N085T Datasheet
Download the complete datasheet for Ixys IXTP70N085T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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